Optimization strategies for metallization in n-type crystalline silicon TOPCon solar cells: Pathways to elevated fill factor and enhanced efficiency
The annealing of the n-a-Si: H layer at 900 C in an N 2 atmosphere for 25 min transforms it into phosphorus-doped polycrystalline silicon (n + -poly-Si) layers. These layers are integral to the electrical properties of the TOPCon cell. Furthermore, a stack of 8 nm of Al 2 O 3 on the front side and 80–90 nm of SiN x (via PECVD) on the back side is deposited.